The space environment exposes electronics to gamma radiation which disrupts proper circuit functionality if not properly protected against. This research is on a radiation-hardened test structure for a CMOS process, including different MOSFETs, a bandgap voltage reference, and an op-amp under Cobalt-60 gamma radiation up to 1 MRad. Gamma radiation causes the threshold voltage of MOSFETs to shift, thus this research will measure said shift and the performance of the circuits under radiation. It is expected that these circuits will degrade in performance, thus the best design practice for radiation tolerance will be determined based on the measurements.
Currently, spacecraft solar arrays can degrade from 20-50% in power producing capability over a 15-year mission, making it unfeasible for current state-of-the-art designs to access the full power available from the solar array. The objective of this research is to elongate the duration of spacecraft missions by creating a gallium nitride (GaN) switch that will dynamically reconfigure dead or near-death solar cells while they are in space, on their missions. A switch has been designed and coded that will be temperature and radiation robust so that it will endure the difficulties of launch and space travel.